| PART |
Description |
Maker |
| XTSC0201-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0603-100NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT |
Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 |
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 300 V, SILICON, RECTIFIER DIODE
VGA VIDEO CABLE 100 FT MM 25 A, 100 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 600 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 400 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
Diotec Elektronische
|
| BZG01 BZG01-C10 BZG01-C100 BZG01-C110 BZG01-C12 BZ |
SMA voltage regulator diodes 200 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 43 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 62 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Supervisory Circuit with Watchdog and Manual Reset in 5-Lead SC70 and SOT-23; Package: SC70; No of Pins: 5; Temperature Range: Industrial 22 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 10 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 51 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 12 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 120 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 56 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 15 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMA voltage regulator diodes 27 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CMOS Switched-Capacitor Voltage Converter; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 91 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CMOS Switched-Capacitor Voltage Converter; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
µP Supervisory Circuit with Watchdog Feature, 4.65V Threshold Voltage, Low Supply Current and Active Low Reset Output. Upgrade for ADM699; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
|
Kingbright, Corp.
Power-One, Inc.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| DN |
NTC Thermistors, Applications Include: Temperature Measurement, Temperature Control, Inrush Current Limiting, Temperature Compensation, Sensing Liquid Level or Air Flow
|
Vishay
|
| 1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA
0TC Reference Voltage Zener
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY82120 KTY82121 KTY82122 KTY82110 KTY82210 KTY82 |
Silicon temperature sensors
|
NXP Semiconductors
|
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